A bipolar transistor amplifier with a common-base connection and a positive feedback network between the collector (output) and the emitter (input).

Related Terms

POINT-JUNCTION TRANSISTOR

Transistor having a base electrode and both point-contact and junction electrodes.

PNP TRANSISTOR

A junction transistor having an n-type base between a p-type emitter and a p-type collector.

PNIP TRANSISTOR

An intrinsic junction transistor in which the intrinsic region is sandwiched between the n-type base and the p-type collector.

NPN TRANSISTOR

A junction transistor having a p-type base between an n-type emitter and an n-type collector; the emitter should then be negative with respect to the base, and the collector should be positive with respect to the base.

NOZZLE THROAT AREA

The area of the minimum cross section of a nozzle. npin transistor

MULTICHANNEL FIELD-EFFECT TRANSISTOR

A field-effect transistor in which appropriate voltages are applied to the gate to control the space within the current flow channels.

MICROALLOY TRANSISTOR

1. A transistor in which the emitter and collector electrodes are formed by etching depressions, then electroplating and alloying a thin film of the impurity metal to the semiconductor wafer, somewhat as in a an electrode with a microscopic tip dimension that may be placed adjacent to or inside a cell for the purpose of recording the electric potentials of single cells, passing electrical currents, or injecting electrically charged substances into the cell. 2. In physical chemistry, a minute electrode used to perform electrolysis of small quantities of material.

MICROALLOY DIFFUSED TRANSISTOR

A microalloy transistor in which the semiconductor wafer is first subjected to gaseous diffusion to produce a nonuniform base region. Abbreviated MADT.

METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

A field-effect transistor having a gate that is insulated from the semiconductor substrate by a thin layer of silicon dioxide. Abbreviated MOSFET; MOST; MOS transistor. Formerly known as insulated-gate field-effect transistor (IGFET).

MESA TRANSISTOR

A transistor in which a germanium or silicon wafer is etched down in steps so the base and emitter regions appear as physical plateaus above the collector region.

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