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A silicon rectifier in which carefully controlled, nondestructive internal avalanche breakdown across the entire junction area protects the junction surface, thereby eliminating local heating that would impair or destroy the reverse blocking ability of the rectifier. |
Related Terms |
AVALANCHE VOLTAGE
The reverse voltage required to cause avalanche breakdown in a pn semiconductor junction. |
AVALANCHE DIODE
A semiconductor breakdown diode, usually made of silicon, in which avalanche breakdown occurs across the entire pn junction and voltage drop is then essentially constant and independent of current; the two most important types are IMPATT and TRAPATT diodes. |
IMPATT DIODE
A pn junction diode that has a depletion region adjacent to the junction, through which electrons and holes can drift, and is biased beyond the avalanche breakdown voltage. Derived from impact avalanche and transit time diode. |
AVALANCHE IMPEDANCE
The complex ratio of the reverse voltage of a device that undergoes avalanche breakdown to the reverse current. |
AVALANCHE TRANSISTOR
A transistor that utilizes avalanche breakdown to produce chain generation of charge-carrying hole-electron pairs. |
AVALANCHE PHOTODIODE
A photodiode operated in the avalanche breakdown region to achieve internal photo current multiplication, thereby providing rapid light-controlled switching operation. |
ACTIVE AREA ACTIVE AREA
The area of a metallic rectifier that acts as the rectifying junction and conducts current in the forward direction. |
BREAKDOWN DIODE
A semiconductor diode in which the reverse-voltage breakdown mechanism is based either on the Zener effect or the avalanche effect. |
DIVERGING DUCT
Fluid-flow conduit whose internal cross-sectional area increases in the direction of flow. |
DESIGN HEATING LOAD
The space heating needs of a building or an enclosed area expressed in terms of the probable maximum requirement. |
