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The phase angle at which a semiconductor diode ceases to conduct; it is slightly less than 180 because the diode requires some forward bias to conduct.



Related Terms

PHASE SHIFT

The phase angle between the input and output signals of a network or system.

FORWARD BIAS

A bias voltage that is applied to a pn-junction in the direction that causes a large current flow; used in some semiconductor diode circuits.

PHASE-SHIFTING TRANSFORMER

A transformer which produces a difference in phase angle between two circuits.

INJECTION EFFICIENCY

A measure of the efficiency of a semiconductor junction when a forward bias is applied, equal to the current of injected minority carriers divided by the total current across the junction.

DIODE FORWARD VOLTAGE

The voltage across a semiconductor diode that is carrying current in the forward direction; it is usually approximately constant over the range of currents commonly used. Also known as diode drop; ware or metal by immersion into a tank of melted nonmetallic material, such as resin or plastic, then chilling the adhering melt.

AVALANCHE BREAKDOWN

Nondestructive breakdown in a semiconductor diode when the electric field across the barrier region is strong enough so that current carriers collide with valence electrons to produce ionization and cumulative multiplication of carriers.

ALLOY-JUNCTION DIODE

A junction diode made by placing a pill of doped alloying material on a semiconductor material and heating until the molten alloy melts a portion of the semiconductor, resulting in a junction when the dissolved semiconductor recrystallizes. Also known as fused-junction diode.

FIELD-EFFECT DIODE

A semiconductor diode in which the charge carriers are of only one polarity.

INSULATED-GATE BIPOLAR TRANSISTOR

A power semiconductor device that combines low forward voltage drop, gate-controlled turnoff, and high switching speed. It structurally resembles a vertically diffused MOSFET, featuring a double diffusion of a p-type region and an n-type region, but differs from the MOSFET in the use of a p substrate layer (in the case of an nchannel device) for the drain. The effect is to change the transistor into a bipolar device, as this p-type region injects holes into the n-type drift region. Abbreviated IGBT.

CROSSED-FIELD AMPLIFIER

A forward wave, beam-type microwave amplifier that uses crossed-field interaction to achieve good phase stability, high efficiency, high gain, and wide bandwidth for most of the microwave spectrum.

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